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Author Ghara, Somnath ♦ Sundaresan, A. ♦ Yoo, Kyongjun ♦ Kim, Kee Hoon
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ANTIFERROMAGNETISM ♦ BISMUTH IONS ♦ DIELECTRIC MATERIALS ♦ FERROMAGNETISM ♦ MAGNETORESISTANCE ♦ SAMARIUM IONS ♦ SPIN GLASS STATE ♦ TEMPERATURE RANGE 0013-0065 K ♦ TEMPERATURE RANGE 0065-0273 K
Abstract BiMnFe{sub 2}O{sub 6} exhibits a spiral antiferromagnetic ordering below 212 K and a reentrant spin glass transition at 34 K. Further, magnetic and dielectric anomalies occur at the same temperature (T = 170 K) with a significant magnetodielectric effect. Upon substitution of Sm{sup 3+} for Bi{sup 3+} ions in Bi{sub 1−x}Sm{sub x}MnFe{sub 2}O{sub 6} (x = 0.1 and 0.2), the dielectric anomaly shifts to low temperatures (T = 135 and 72 K, respectively), whereas the magnetic anomaly develops into a weak ferromagnetism. For x = 0.2, the weak ferromagnetism occurs in a wide temperature range (90–201 K). Below 90 K, it undergoes a transition to an antiferromagnetic state. In contrast to the parent compound (x = 0), the magnetodielectric effect is observed both in the antiferromagnetic region (T < 90 K) with a maximum at the dielectric anomaly (72 K) and also in the weak ferromagnetic region. It has been shown that the magnetodielectric effect in the antiferromagnetic region has an intrinsic capacitive origin while that observed at the weak ferromagnetic region originates from magnetoresistance.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-10-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 16


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