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Author McIntyre, Paul C.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CERAMICS ♦ DEFECTS ♦ PHOTOELECTRON SPECTROSCOPY ♦ POINT DEFECTS ♦ STRONTIUM TITANATES ♦ THIN FILMS
Abstract Equilibrium calculations of point defect and electronic carrier distributions in acceptor impurity-containing SrTiO{sub 3} thin films were performed. The simulation methodology was based on previous calculations of near-grain boundary point defect equilibrium in acceptor-doped SrTiO{sub 3} ceramics. Attention was focused on the effects of temperature and the presence of Pt electrode interfaces on the conditions for defect equilibrium. The local electrostatic potential and the distribution of oxygen vacancies across films of varying thickness were predicted for various simulated equilibration conditions. The effects of hydrogen doping were analyzed, and simulated equilibrium potential distributions were compared to the results of reported photoelectron spectroscopy studies of Pt/SrTiO{sub 3} and Pt/(Ba,Sr)TiO{sub 3} thin film structures. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 12


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