Thumbnail
Access Restriction
Open

Author Hathwar, Raghuraj ♦ Dutta, Maitreya ♦ Chowdhury, Srabanti ♦ Goodnick, Stephen M. ♦ Koeck, Franz A. M. ♦ Nemanich, Robert J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ A CODES ♦ ACTIVATION ENERGY ♦ BORON ♦ BREAKDOWN ♦ CARRIER MOBILITY ♦ COMPARATIVE EVALUATIONS ♦ COMPUTERIZED SIMULATION ♦ CURRENT DENSITY ♦ DIAMONDS ♦ DOPED MATERIALS ♦ ELECTRIC POTENTIAL ♦ ELECTRONIC STRUCTURE ♦ IMPURITIES ♦ PHOSPHORUS ♦ S CODES ♦ SCHOTTKY BARRIER DIODES ♦ TEMPERATURE DEPENDENCE ♦ THERMAL CONDUCTIVITY ♦ THREE-DIMENSIONAL CALCULATIONS
Abstract Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-06-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 22


Open content in new tab

   Open content in new tab