Thumbnail
Access Restriction
Open

Author Zolper, J. C. ♦ Klem, J. F. ♦ Howard, A. J. ♦ Hafich, M. J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ALUMINIUM COMPOUNDS ♦ ION IMPLANTATION ♦ GALLIUM ANTIMONIDES ♦ MAGNESIUM ADDITIONS ♦ ANNEALING ♦ BERYLLIUM ADDITIONS ♦ CARBON ADDITIONS ♦ CRYSTAL DEFECTS ♦ CRYSTAL DOPING ♦ DIFFUSION ♦ ELECTRIC CONDUCTIVITY ♦ FIELD EFFECT TRANSISTORS ♦ MANGANESE ADDITIONS ♦ ZINC ADDITIONS ♦ ALUMINIUM ANTIMONIDES ♦ SURFACE STRUCTURE
Abstract {ital p}-type ion-implantation doping of Al{sub 0.75}Ga{sub 0.25}Sb is reported. The surface morphology and electrical properties of Al{sub 0.75}Ga{sub 0.25}Sb are shown by atomic force microscopy and Hall measurements to be degraded after rapid thermal annealing of 650{degree}C. Implantation of Be and Mg results in sheet hole concentrations twice that of the implanted acceptor dose of 1{times}10{sup 13} cm{sup {minus}2} following a 600{degree}C anneal. This is explained in terms of double acceptor or antisite defect formation. Implanted C acts as an acceptor but also demonstrates excess hole conduction attributed to implantation-induced defects. Implanted Zn requires higher annealing temperatures than Be and Mg to achieve 100{percent} effective activation for a dose of 1{times}10{sup 13} cm{sup {minus}2} probably as a result of more implantation-induced damage created from the heavier Zn ion. Secondary ion mass spectroscopy of as-implanted and annealed Be, Mg, and C samples are presented. Diffusion of implanted Be (5{times}10{sup 13} cm{sup {minus}2}, 45 keV) is shown to have an inverse dependence on temperature that is attributed to a substitutional-interstitial diffusion mechanism. Implanted Mg (1{times}10{sup 14} cm{sup {minus}2}, 110 keV) shows dramatic redistribution and loss at the surface of up to 56{percent} after a 600{degree}C anneal. Implanted C (2.5{times}10{sup 14} cm{sup {minus}2}, 70 keV) displays no redistribution even after a 650{degree}C anneal. This work lays the foundation for using ion-implantation doping in high performance AlGaSb/InGaSb-based {ital p}-channel field-effect transistors.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-02-01
Publisher Department Sandia National Laboratory
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 79
Issue Number 3
Organization Sandia National Laboratory


Open content in new tab

   Open content in new tab