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Author Moyerman, S.M. ♦ Gannett, W. ♦ Borchers, J.A. ♦ Doucet, M. ♦ Carey, M.J. ♦ Sparks, P.D. ♦ Eckert, J.C.
Sponsorship IEEE Magnetics Society
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1965
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Spin valves ♦ Antiferromagnetic materials ♦ Giant magnetoresistance ♦ Neutrons ♦ Magnetization ♦ Hysteresis ♦ Iron ♦ NIST ♦ Polarization ♦ Reflectometry ♦ interface magnetism ♦ Antiferromagnetic (AFM) materials ♦ giant magnetoresistance (GMR)
Abstract We have investigated the mechanism of weak exchange bias for a spin valve with threshold layer antiferromagnetic (AFM) thickness using giant magnetoresistance (GMR) and polarized neutron reflectometry (PNR). Results show that the sample exhibits instantaneous switching of the free layer followed by a gradual reorientation of the magnetization in the pinned ferromagnetic layer via domain wall formation. During subsequent field cycles, we found that relaxation in the pinned ferromagnetic (FM) layer is induced not only by an increasing field, but also in a static field over a relatively long time scale
Description Author affiliation :: Phys. Dept., Harvey Mudd Coll., Claremont, CA
ISSN 00189464
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2006-10-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 42
Issue Number 10
Size (in Bytes) 1.47 MB
Page Count 3
Starting Page 2630
Ending Page 2632

Source: IEEE Xplore Digital Library