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Author Riise, Heine Nygard ♦ Azarov, Alexander ♦ Svensson, Bengt G. ♦ Monakhov, Edouard ♦ Schumann, Thomas ♦ Hübner, Renè ♦ Skorupa, Wolfgang
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ABUNDANCE ♦ ANNEALING ♦ BORON ♦ DEPTH ♦ DIFFUSION ♦ DOPED MATERIALS ♦ ENERGY DENSITY ♦ FILMS ♦ INTERSTITIALS ♦ SILICON ♦ SPIN ♦ SPIN-ON COATING ♦ ZONES
Abstract Shallow, Boron (B)-doped p{sup +} emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10{sup 19 }cm{sup –3} and 3 × 10{sup 20 }cm{sup –3}, and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ∼93 J/cm{sup 2} irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-13
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 2


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