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Author Bhattacharyya, S. ♦ Auciello, O. ♦ Birrell, J. ♦ Carlisle, J. A. ♦ Curtiss, L. A. ♦ Goyette, A. N. ♦ Gruen, D. M. ♦ Krauss, A. R. ♦ Schlueter, J. ♦ Sumant, A.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ CHEMICAL VAPOR DEPOSITION ♦ DIAMONDS ♦ ELECTRIC CONDUCTIVITY ♦ MIXTURES ♦ NITROGEN ♦ SYNTHESIS ♦ THIN FILMS ♦ TRANSPORT
Abstract Ultrananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were synthesized by a microwave plasma-enhanced chemical-vapor-deposition method using a CH{sub 4}(1%)/Ar gas mixture and 1%--20% nitrogen gas added. The electrical conductivity of the nitrogen-doped UNCD films increases by five orders of magnitude (up to 143 {Omega}-1 cm-1) with increasing nitrogen content. Conductivity and Hall measurements made as a function of film temperature down to 4.2 K indicate that these films have the highest n-type conductivity and carrier concentration demonstrated for phase-pure diamond thin films. Grain-boundary conduction is proposed to explain the remarkable transport properties of these films.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-09-03
Publisher Department Argonne National Laboratory (ANL), Argonne, IL
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 10
Organization Argonne National Laboratory (ANL), Argonne, IL


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