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Author Xi, J. ♦ Morrison, S. ♦ Coates, K. ♦ Madan, A.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SOLAR ENERGY ♦ THIN FILMS ♦ SILICON ♦ AMORPHOUS STATE ♦ CHEMICAL VAPOR DEPOSITION ♦ DOPED MATERIALS ♦ PHOTOCONDUCTIVITY ♦ CHEMICAL BONDS ♦ MICROSTRUCTURE
Abstract For the {open_quotes}Hot Wire{close_quotes} chemical vapor deposition (HWCVD) method to be applicable for photovoltaic applications certain critical technical issues need to be addressed and resolved such as, lifetime of the filaments used, reproducibility, large area demonstration of the material and stable devices. We have developed a new approach which addresses some of these problems, specifically longevity of the filaments and reproducibility of the materials produced. This new technique does not seem to introduce contaminants into the materials from the source and can produce high quality amorphous Silicon (intrinsic and doped) and intrinsic microcrystalline silicon films. {copyright} {ital 1999 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Place United States
Volume Number 462
Issue Number 1
Technical Publication No. CONF-980935-


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