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Author Ju, Yong Chan ♦ Kim, Seungwook ♦ Seong, Tae-Geun ♦ Nahm, Sahn ♦ Chung, Haegeun ♦ Hong, Kwon ♦ Kim, Woong
Source World Health Organization (WHO)-Global Index Medicus
Content type Text
Publisher Wiley-VCH
File Format HTM / HTML
Language English
Difficulty Level Medium
Subject Domain (in DDC) Technology ♦ Medicine & health
Abstract We demonstrate that resistance random access memory (RRAM) can be fabricated based on CdS-nanocrystal thin films. A simple drop-drying of the CdS-nanocrystal solution leads to the formation of uniform thin films with controlled thickness. RRAMs with a $Ag/Al_{2}O_{3}/CdS/Pt$ structure show bipolar switching behavior, with average values of the set voltage $(V_{Set})$ and reset voltage $(V_{Reset})$ of 0.15 V and –0.19 V, respectively. The RRAM characteristics are critically influenced by the thickness of the $Al_{2}O_{3}$ barrier layer, which prevents significant migration of Ag into the CdS layer as revealed by Auger electron spectroscopy (AES). Interestingly, RRAM without an $Al_{2}O_{3}$ layer (i.e., Ag/CdS/Pt structure) also shows bipolar switching behavior, but the polarity is opposite to that of RRAM with the $Al_{2}O_{3}$ layer (i.e., $Ag/Al_{2}O_{3}/CdS/Pt$ structure). The operation of both kinds of devices can be explained by the conventional conductive bridging mechanism. Additionally, we fabricated RRAM devices on Kapton film for potential applications in flexible electronics, and the performance of this RRAM device was comparable to that of RRAMs fabricated on hard silicon substrates. Our results show a new possibility of using chalcogenide nanocrystals for RRAM applications.
Description Author Affiliation: Ju YC ( Department of Materials Science and Engineering, Korea University, Seoul 136-713, Republic of Korea.)
ISSN 16136810
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Reading ♦ Research ♦ Self Learning
Interactivity Type Expositive
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-09-24
Publisher Place Germany
e-ISSN 16136829
Journal Small
Volume Number 8
Issue Number 18

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Source: WHO-Global Index Medicus