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Author Dai, Ching-Liang ♦ Lu, Po-Wei ♦ Wu, Chyan-Chyi ♦ Chang, Chienliu
Source World Health Organization (WHO)-Global Index Medicus
Content type Text
Publisher Multidisciplinary Digital Publishing Institute
File Format HTM / HTML
Language English
Difficulty Level Medium
Subject Domain (in DDC) Technology ♦ Medicine & health
Abstract In this study, we fabricated a wireless micro FET (field effect transistor) pressure sensor based on the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The wireless micro pressure sensor is composed of a FET pressure sensor, an oscillator, an amplifier and an antenna. The oscillator is adopted to generate an ac signal, and the amplifier is used to amplify the sensing signal of the pressure sensor. The antenna is utilized to transmit the output voltage of the pressure sensor to a receiver. The pressure sensor is constructed by 16 sensing cells in parallel. Each sensing cell contains an MOS (metal oxide semiconductor) and a suspended membrane, which the gate of the MOS is the suspended membrane. The post-process employs etchants to etch the sacrificial layers in the pressure sensor for releasing the suspended membranes, and a LPCVD (low pressure chemical vapor deposition) parylene is adopted to seal the etch holes in the pressure. Experimental results show that the pressure sensor has a sensitivity of 0.08 mV/kPa in the pressure range of 0-500 kPa and a wireless transmission distance of 10 cm.
Description Author Affiliation: Dai CL ( Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan)
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Reading ♦ Research ♦ Self Learning
Interactivity Type Expositive
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-01-01
Publisher Place Switzerland
e-ISSN 14248220
Journal Sensors
Volume Number 9
Issue Number 11

Source: WHO-Global Index Medicus