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Author Yoshikawa, A. ♦ Yamamoto, A. ♦ Hirose, M. ♦ Sugino, T. ♦ Kano, G. ♦ Teramoto, I.
Sponsorship IEEE Lasers and Electro-Optics Society
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1965
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword MOCVD ♦ Optical device fabrication ♦ Chemical lasers ♦ Chemical technology ♦ Substrates ♦ Anisotropic magnetoresistance ♦ Threshold current ♦ Laser beams ♦ Laser modes ♦ Laser stability
Abstract A new technology of fabricating a buried heterostructure laser with a narrow active layer in a single-step MOCVD process other than the conventional two-step process is proposed. The technology is based on the separate growth on the undercut ridge. The anisotropic growth has been found to be very useful for formation of a very narrow active region in a self-aligned manner. The novel RBH laser implemented by the single-step MOCVD process has been proposed. The RBH laser has exhibited CW lasing oscillation with a threshold current as low as 30 mA at room temperature and with the circular beam spot.
Description Author affiliation :: Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
ISSN 00189197
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1987-06-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 23
Issue Number 6
Size (in Bytes) 1.51 MB
Page Count 5
Starting Page 725
Ending Page 729


Source: IEEE Xplore Digital Library