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Author Mangold, Claudia ♦ Neogi, Sanghamitra ♦ Donadio, Davide
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BOLTZMANN EQUATION ♦ DENSITY FUNCTIONAL METHOD ♦ EFFICIENCY ♦ ELECTRIC CONDUCTIVITY ♦ LAYERS ♦ MEMBRANES ♦ NANOWIRES ♦ OXIDES ♦ SILICON ♦ THERMAL CONDUCTIVITY ♦ THERMOELECTRIC MATERIALS ♦ THICKNESS ♦ THIN FILMS
Abstract Silicon nanostructures with reduced dimensionality, such as nanowires, membranes, and thin films, are promising thermoelectric materials, as they exhibit considerably reduced thermal conductivity. Here, we utilize density functional theory and Boltzmann transport equation to compute the electronic properties of ultra-thin crystalline silicon membranes with thickness between 1 and 12 nm. We predict that an optimal thickness of ∼7 nm maximizes the thermoelectric figure of merit of membranes with native oxide surface layers. Further thinning of the membranes, although attainable in experiments, reduces the electrical conductivity and worsens the thermoelectric efficiency.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-08-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 5


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