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Author Kim, Yeongho ♦ Kim, Jun Oh ♦ Lee, Sang Jun ♦ Ban, Keun-Yong ♦ Zhang, Chaomin ♦ Honsberg, Christiana B.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DISLOCATIONS ♦ GALLIUM ARSENIDES ♦ GALLIUM PHOSPHIDES ♦ INDIUM ARSENIDES ♦ LAYERS ♦ PHOTOCURRENTS ♦ QUANTUM DOTS ♦ QUANTUM EFFICIENCY ♦ SOLAR CELLS ♦ STRAINS ♦ WAVELENGTHS
Abstract The structural characteristics and device performance of strain-compensated InAs/GaAsSb quantum dot solar cells (QDSCs) with different GaP coverages have been studied. The in-plane (out-of-plane) compressive strain of the QD stacks is reduced from −1.24 (+1.06) to −0.39 (+0.33)% by increasing the GaP coverage from 0 to 4 ML. This strain compensation decreases strain-induced dislocation density and hence enhances the overall crystal quality of the QDSCs. The external quantum efficiency spectra reveal that the increase in the GaP coverage increases the photocurrent from wavelengths shorter than GaAs bandedge of 880 nm, while it decreases the photocurrent from near infrared wavelengths beyond the bandedge. The conversion efficiency of the QDSCs is significantly improved from 7.22 to 9.67% as the GaP coverage is increased from 0 to 4 ML.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-07
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 10


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