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Author Tabataba-vakili, Farsane ♦ Rennesson, Stéphanie ♦ Damilano, Benjamin ♦ Frayssinet, Eric ♦ Duboz, Jean-Yves ♦ Semond, Fabrice ♦ Roland, Iännis ♦ Paulillo, Bruno ♦ Colombelli, Raffaele ♦ Kurdi, Moustafa El ♦ Checoury, Xavier ♦ Sauvage, Sebastien ♦ Doyennette, Laetitia ♦ Brimont, Christelle ♦ Guillet, Thierry ♦ Gayral, Bruno ♦ Boucaud, Philippe
Source Hyper Articles en Ligne (HAL)
Content type Text
Publisher Optical Society of America
File Format PDF
Language English
Subject Keyword phys ♦ spi ♦ Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] ♦ Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm 2 output power density at 20 mA from such microrings with diameters of 30 to 50 µm. The first steps towards achieving an integrated photonic circuit are demonstrated.
ISSN 10944087
Educational Use Research
Learning Resource Type Article
Publisher Date 2019-04-12
Journal Optics Express
Volume Number 27
Issue Number 8
Page Count 9
Starting Page 11800
Ending Page 11808