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Author Montalenti, F. ♦ Sorensen, M. R. ♦ Voter, A. F.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CRYSTAL GROWTH ♦ DEPOSITION ♦ DIFFUSION ♦ ROUGHNESS
Abstract We present atomistic simulations of crystal growth where realistic experimental deposition rates are reproduced, without needing any a priori information on the relevant diffusion processes. Using the temperature accelerated dynamics method, we simulate the deposition of 4 monolayers (ML) of Ag/Ag(100) at the rate of 0.075 ML/s, thus obtaining a boost of several orders of magnitude with respect to ordinary molecular dynamics. In the temperature range analyzed (0--70 K), steering and activated mechanisms compete in determining the surface roughness.
ISSN 00319007
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-09-17
Publisher Department Los Alamos National Laboratory
Publisher Place United States
Journal Physical Review Letters
Volume Number 87
Issue Number 12
Organization Los Alamos National Laboratory


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