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Author Deepu, D. R. ♦ Jubimol, J. ♦ Kartha, C. Sudha ♦ Louis, Godfrey ♦ Vijayakumar, K. P. ♦ Kumar, K. Rajeev
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ABSORPTION ♦ ABSORPTION SPECTRA ♦ ANNEALING ♦ BUFFERS ♦ DIFFUSION ♦ EMISSION SPECTRA ♦ ENERGY GAP ♦ LAYERS ♦ PYROLYSIS ♦ SOLAR CELLS ♦ SPRAYS ♦ THIN FILMS ♦ TIN ♦ ZINC OXIDES
Abstract In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-06-24
Publisher Place United States
Volume Number 1665
Issue Number 1


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