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Author Luo, Y. H. ♦ Wan, J. ♦ Forrest, R. L. ♦ Liu, J. L. ♦ Goorsky, M. S. ♦ Wang, K. L.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ BUFFERS ♦ DISLOCATIONS ♦ MOLECULAR BEAM EPITAXY ♦ PERFORMANCE ♦ PHOTOLUMINESCENCE ♦ PHYSICS ♦ RAMAN SPECTROSCOPY ♦ SPECTROSCOPY ♦ THICKNESS ♦ X-RAY DIFFRACTION
Abstract High-quality strain-relaxed SiGe templates with a low threading dislocation density and smooth surface are critical for device performance. In this work, SiGe films on low temperature Si buffer layers were grown by solid-source molecular beam epitaxy and characterized by atomic force microscope, double-axis x-ray diffraction, photoluminescence spectroscopy, and Raman spectroscopy. Effects of the growth temperature and the thickness of the low temperature Si buffer were studied. It was demonstrated that when using proper growth conditions for the low temperature Si buffer the Si buffer became tensily strained and gave rise to the compliant effect. The lattice mismatch between the SiGe and the Si buffer layer was reduced. A 500 nm Si{sub 0.7}Ge{sub 0.3} film with a low threading dislocation density as well as smooth surface was obtained by this method. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-15
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 12


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