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Author Perlin, P. ♦ Mattos, L. ♦ Shapiro, N. A. ♦ Kruger, J. ♦ Wong, W. S. ♦ Sands, T. ♦ Cheung, N. W. ♦ Weber, E. R.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ GALLIUM COMPOUNDS ♦ GALLIUM NITRIDES ♦ ENERGY GAP ♦ ELECTRONIC STRUCTURE ♦ SUBSTRATES ♦ SAPPHIRE ♦ PHOTOLUMINESCENCE ♦ PRESSURE DEPENDENCE ♦ THIN FILMS ♦ SIMULATION ♦ COMPRESSION
Abstract We have performed a detailed investigation of the photoluminescence pressure dependence of heteroepitaxial GaN thin films on sapphire substrates. A comparison between as grown GaN on sapphire and free-standing GaN membranes, created using a laser assisted substrate liftoff process, revealed that the presence of the sapphire substrate leads to an energy gap pressure coefficient reduction of approximately 5{percent}. This result agrees with the numerical simulations presented in this article. We established that the linear pressure coefficient of free-standing GaN is 41.4{plus_minus}0.2 meV/GPa, and that the deformation potential of the energy gap is {minus}9.36{plus_minus}0.04 eV. Our results also suggest a new, lower value of the pressure derivative for the bulk modulus of GaN (B{sup {prime}}=3.5). {copyright} {ital 1999 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-02-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 85
Issue Number 4


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