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Author Krames, M. R. ♦ Minervini, A. D. ♦ Chen, E. I. ♦ Holonyak, N. (Jr.) ♦ Baker, J. E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ALUMINIUM ARSENIDES ♦ THERMODYNAMIC PROPERTIES ♦ GALLIUM ARSENIDES ♦ SUPERLATTICES ♦ ANNEALING ♦ DIFFUSION ♦ HETEROJUNCTIONS ♦ MIXING ♦ PHOTOLUMINESCENCE ♦ VACANCIES ♦ ZINC ADDITIONS
Abstract Data are presented on the reduction of layer intermixing (disordering) in AlGaAs--GaAs quantum well heterostructures (QWH) during high-temperature anneals by an initial low-temperature ``blocking`` Zn diffusion. Room-temperature photoluminescence measurements of the increase in the lowest electron-to-heavy-hole transition energy in the QW are used to characterize the extent of layer intermixing. Doped (C and Si) samples annealed (850 {degree}C, 12 h) after a low-temperature blocking Zn diffusion (480 {degree}C) exhibit reductions in energy shift from {similar_to}177 meV to as little as {similar_to}18 meV. Similar effects are also observed, but to a lesser extent, for undoped samples. The improved thermal stability is attributed to a Zn-diffusion induced reduction in the number of column-III vacancies in the active layers and is confirmed by secondary-ion mass spectroscopy measurements. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1995-09-25
Publisher Department University of Illinois
Publisher Place United States
Journal Applied Physics Letters
Volume Number 67
Issue Number 13
Organization University of Illinois


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