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Author Roth, J. ♦ Graupner, H. ♦ Withrow, S. P. ♦ Zehner, D. ♦ Zuhr, R. A.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CHEMISTRY ♦ MATERIALS SCIENCE ♦ GRAPHITE ♦ CHEMICAL REACTIONS ♦ PYROLYTIC CARBON ♦ SILICON ♦ TITANIUM ♦ MOLYBDENUM ♦ ION IMPLANTATION ♦ LAYERS ♦ TEMPERATURE RANGE 1000-4000 K ♦ CARBIDES ♦ PHASE STUDIES ♦ PHOTOELECTRON SPECTROSCOPY ♦ DIFFUSION ♦ RBS
Abstract The interaction of Si, Ti, and Mo atoms with pyrolytic graphite substrates has been studied for evaporated layers of about 100 nm and implanted ions with mean ranges between 2 and 4 nm. In the temperature range from room temperature to 1800 K the thermal diffusion of carbon into the evaporated layers has been studied by Rutherford backscattering spectroscopy while the temperature dependence of the carbide formation has been studied by x-ray photoelectron spectroscopy. For all three systems stable carbidic phases are predicted by equilibrium phase diagrams. For Ti the formation of TiC is already observed after room temperature implantation, while for Mo annealing to 1200 K is necessary for Mo{sub 2}C formation. In the case of Si oxygen contamination due to the air transfer after implantation resulted in a mixed SiO{sub {ital x}}C{sub {ital y}} phase which only transformed into a SiC phase at temperatures above 900 K, where the oxygen was released. The temperature range of stability of the carbidic layers was found to be correlated to the melting temperature of the metal{endash}carbide eutectic. Above this temperature the metal atoms rapidly dissolve in the graphite lattice. {copyright} {ital 1996 American Institute of Physics.}
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-05-01
Publisher Department Oak Ridge National Laboratory
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 79
Issue Number 10
Organization Oak Ridge National Laboratory


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