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Author Saha, D. ♦ Misra, P. ♦ Joshi, M. P. ♦ Kukreja, L. M. ♦ Das, Gangadhar
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ COHERENCE LENGTH ♦ FLUCTUATIONS ♦ MAGNETORESISTANCE ♦ TEMPERATURE DEPENDENCE ♦ THICKNESS ♦ THIN FILMS ♦ TITANIUM OXIDES ♦ ZINC OXIDES
Abstract Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-01-18
Publisher Place United States
Journal Applied Physics Letters
Volume Number 108
Issue Number 3


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