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Author Patel, M. M. ♦ Soni, P. H. ♦ Desai, C. F.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ABSORPTION ♦ ABSORPTION SPECTRA ♦ ALKALI METAL COMPOUNDS ♦ ANTIMONY TELLURIDES ♦ BISMUTH TELLURIDES ♦ CRYSTALS ♦ NANOSTRUCTURES ♦ SEMICONDUCTOR MATERIALS ♦ SOLID SOLUTIONS ♦ SOLIDS ♦ SUBSTRATES ♦ THICKNESS ♦ THIN FILMS
Abstract Thin films of Bi{sub 2}Te{sub 3}(Sb) were prepared on alkali halide crystal substrates. Sb content and the film thickness were varied. Bi{sub 2}Te{sub 3} is a narrow gap semiconductor. Bi-Sb is a continuous solid solution of substitutional type and Sb therefore was used to test its effect on the band gap. The film thickness variation was also taken up. The infra-red absorption spectra were used in the wave number range 400 cm{sup −1} to 4000 cm{sup −1}. The band gap obtained from the absorption data was found to increase with decreasing thickness since the thickness range used was from 30 nm to 170 nm. This is a range corresponding to nanostructures and hence quantum size effect was observed as expected. The band gap also exhibited Sb content dependence. The detail results are have been reported and explained.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-05-23
Publisher Place United States
Volume Number 1731
Issue Number 1


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