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Author Sunghun Hong ♦ Jongsun Choi ♦ Youngmin Kim
Sponsorship IEEE Electron Devices Society
Source IEEE Xplore Digital Library
Content type Text
Publisher Institute of Electrical and Electronics Engineers, Inc. (IEEE)
File Format PDF
Copyright Year ©1963
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics ♦ Electricity & electronics ♦ Technology ♦ Engineering & allied operations ♦ Applied physics
Subject Keyword Organic thin film transistors ♦ Annealing ♦ Leakage current ♦ polystyrene (PS) ♦ Anneal ♦ gate dielectric ♦ organic thin-film transistor (OTFT) ♦ pentacene
Abstract We report a significant increase in the off-state leakage current (<i>I</i> <sub>OFF</sub>) of an organic thin-film transistor with polystyrene (PS) gate dielectric following air exposure. The increased <i>I</i> <sub>OFF</sub> was found to be caused by the degradation of the PS insulation property. The gate leakage current continuously increased, following air exposure for four weeks. Interestingly, the gate leakage current was reduced after the degraded device underwent annealing at 70degC which is lower than the PS glass temperature. The change in the gate leakage is well correlated with <i>V</i> <sub>FB</sub> shift observed in both the air exposure and the following anneal. Based on the observation, we believe that the enhancement of the leakage is likely attributed to the trap generation inside the PS layer.
Description Author affiliation :: Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul
ISSN 00189383
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2008-12-01
Publisher Place U.S.A.
Rights Holder Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Volume Number 55
Issue Number 12
Size (in Bytes) 264.48 kB
Page Count 3
Starting Page 3602
Ending Page 3604

Source: IEEE Xplore Digital Library