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Author Nakane, Ryosho ♦ Harada, Tomoyuki ♦ Sugiura, Kuniaki ♦ Sugahara, Satoshi ♦ Tanaka, Masaaki
Source arXiv.org
Content type Text
File Format PDF
Date of Submission 2010-01-30
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Natural sciences & mathematics ♦ Physics
Subject Keyword Condensed Matter - Materials Science ♦ physics:cond-mat
Abstract Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when the measurements were performed with constant source-drain and source-gate biases. By comparing with the magnetization-related resistance change resulting from the MnAs contacts, we conclude that the spin-polarized electrons are injected from the MnAs source into the Si MOS inversion channel, and detected by the MnAs drain.
Educational Use Research
Learning Resource Type Article


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