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Author Scappucci, G. ♦ Capellini, G. ♦ Lee, W. C. T. ♦ Simmons, M. Y.
Source arXiv.org
Content type Text
File Format PDF
Date of Submission 2009-12-03
Language English ♦ German
Subject Domain (in DDC) Computer science, information & general works ♦ Natural sciences & mathematics ♦ Physics
Subject Keyword Condensed Matter - Mesoscale and Nanoscale Physics ♦ Condensed Matter - Materials Science ♦ physics:cond-mat
Abstract In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 nm to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.
Description Reference: Nanotechnology 20, 295302 (2009)
Educational Use Research
Learning Resource Type Article


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