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Author Wang, K. Y. ♦ Irvine, A. C. ♦ Wunderlich, J. ♦ Edmonds, K. W. ♦ Rushforth, A. W. ♦ Campion, R. P. ♦ Foxon, C. T. ♦ Williams, D. A. ♦ Gallagher, B. L.
Source arXiv.org
Content type Text
File Format PDF
Date of Submission 2008-05-26
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Natural sciences & mathematics ♦ Physics
Subject Keyword Condensed Matter - Mesoscale and Nanoscale Physics ♦ Condensed Matter - Materials Science ♦ physics:cond-mat
Abstract We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with J_C is proportional to M^2.6. The domain wall motion is strongly influenced by the presence of local pinning centres.
Educational Use Research
Learning Resource Type Article
Page Count 12


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