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Author Knez, Ivan ♦ Du, R. R. ♦ Sullivan, Gerard
Source arXiv.org
Content type Text
File Format PDF
Date of Submission 2010-02-01
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Natural sciences & mathematics ♦ Physics
Subject Keyword Condensed Matter - Mesoscale and Nanoscale Physics ♦ physics:cond-mat
Abstract We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the electron-hole hybridization state, and observe a mini gap. Temperature dependence of the conductivity in the gap shows residual conductivity, which can be consistently explained by the contributions from the free as well as the hybridized carriers in the presence of impurity scattering, as proposed by Naveh and Laikhtman [Euro. Phys. Lett., 55, 545-551 (2001)]. Experimental implications for the stability of proposed helical edge states will be discussed.
Educational Use Research
Learning Resource Type Article
Page Count 5


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