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Author Li, J. H. ♦ Stokes, D. W. ♦ Wickett, J. C. ♦ Caha, O. ♦ Bassler, K. E. ♦ Moss, S. C.
Source arXiv.org
Content type Text
File Format PDF
Date of Submission 2009-11-20
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Natural sciences & mathematics ♦ Physics
Subject Keyword Condensed Matter - Materials Science ♦ physics:cond-mat
Abstract We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces. We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the interfaces. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.
Educational Use Research
Learning Resource Type Article
Page Count 40


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