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Author Sarkar, Pranab Kumar ♦ Roy, Asim
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ ALUMINIUM ♦ ANNEALING ♦ CAPACITANCE ♦ CURIUM OXIDES ♦ DEPOSITION ♦ DIELECTRIC MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ HAFNIUM OXIDES ♦ INTERFACES ♦ LEAKAGE CURRENT ♦ PERMITTIVITY ♦ RADIOWAVE RADIATION ♦ SCANNING ELECTRON MICROSCOPY ♦ SEMICONDUCTOR MATERIALS ♦ SILICON OXIDES ♦ SUBSTRATES ♦ THIN FILMS ♦ TRAPPING ♦ X-RAY DIFFRACTION
Abstract The Hafnium oxide (HfO{sub 2}) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO{sub 2} film have been studied employing Al/HfO{sub 2}/p-Si metal–oxide–semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO{sub 2} film is obtained as 23,7.57×1011eV{sup −1} cm{sup −2} and 2.7×10{sup −5} Acm{sup −2}, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-08-28
Publisher Place United States
Volume Number 1675
Issue Number 1


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