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Author Bhardwaj, Shubhendu ♦ Sensale-Rodriguez, Berardi ♦ Xing, Huili Grace ♦ Rajan, Siddharth ♦ Volakis, John L.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALGORITHMS ♦ AMPLIFICATION ♦ ANALYTICAL SOLUTION ♦ COUPLING ♦ DESIGN ♦ DISPERSION RELATIONS ♦ ELECTRON BEAM INJECTION ♦ ELECTRON MOBILITY ♦ LOSSES ♦ MIXERS ♦ NONLINEAR PROBLEMS ♦ NUMERICAL SOLUTION ♦ OPTIMIZATION ♦ PLASMA WAVES ♦ PLASMONS ♦ POWER TRANSMISSION LINES ♦ TRANSISTORS ♦ TUNNEL DIODES ♦ TUNNEL EFFECT
Abstract A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-01-07
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 1


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