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Author Geballe, T. H.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher American Institute of Physics (AIP)
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ANNEALING ♦ DEFECTS ♦ RADIATION EFFECTS ♦ SEMICONDUCTORS ♦ THERMAL CONDUCTIVITY ♦ THERMOELECTRICITY
Abstract The use of thermal conduction and thermoelectric measurements in studying radiation damage effects in semiconductors is discussed. The conclusion is reached that in the present state of knowledge such measurements will probably be more helpful in studying the kinetics of the formation and annealing of radiation-introduced defects than in characterizing the structure of such defects.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 1959-01-01
Publisher Department Bell Telephone Labs., Inc., Murray Hill, N.J.
Journal Journal of Applied Physics
Volume Number 30
Issue Number 8
Organization Bell Telephone Labs., Inc., Murray Hill, N.J.


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