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Author Pinto, S. R. C. ♦ Rolo, A. G. ♦ Gomes, M. J. M. ♦ Ivanda, M. ♦ Bogdanovic-Radovic, I. ♦ Buljan, M. ♦ Grenzer, J. ♦ Muecklich, A. ♦ Barber, D. J. ♦ Bernstorff, S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ NANOSCIENCE AND NANOTECHNOLOGY ♦ ALUMINIUM OXIDES ♦ ANNEALING ♦ ATOMS ♦ CRYSTAL GROWTH ♦ DEPOSITION ♦ FILMS ♦ GERMANIUM ♦ MATRIX MATERIALS ♦ QUANTUM DOTS ♦ SEMICONDUCTOR MATERIALS ♦ SOLIDS ♦ SPUTTERING ♦ VOIDS ♦ ALUMINIUM COMPOUNDS ♦ CHALCOGENIDES ♦ ELEMENTS ♦ HEAT TREATMENTS ♦ MATERIALS ♦ METALS ♦ NANOSTRUCTURES ♦ OXIDES ♦ OXYGEN COMPOUNDS
Abstract We report on the formation of a regularly ordered void lattice with a void size of about 4 nm in an alumina matrix. The voids were formed by thermal treatment of a well-ordered three-dimensional Ge quantum dot lattice formed earlier by self-assembled growth in an alumina matrix during magnetron sputtering codeposition of Ge+Al{sub 2}O{sub 3}. During the subsequent annealing the germanium atoms were lost from the film and so voids were produced. The positions of the voids are ordered in the same way as the Ge quantum dots that were present before annealing, while their sizes can be controlled by the deposition parameters.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2010-10-25
Publisher Place United States
Journal Applied Physics Letters
Volume Number 97
Issue Number 17


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