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Author Hou, Y. ♦ Celano, U. ♦ Vandervorst, W. ♦ Goux, L. ♦ Degraeve, R. ♦ Jurczak, M. ♦ Liu, L. ♦ Cheng, Y. ♦ Kang, J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ATOMIC FORCE MICROSCOPY ♦ ELECTRIC CONTACTS ♦ FILAMENTS ♦ HAFNIUM OXIDES ♦ NANOSTRUCTURES ♦ OPERATION ♦ OPTIMIZATION ♦ STRESSES
Abstract The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-07-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 2


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