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Author Barankova, H. ♦ Bardos, L. ♦ Berg, S.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ TITANIUM NITRIDES ♦ SPUTTERING ♦ MICROHARDNESS ♦ ELECTRIC CONDUCTIVITY ♦ SILICON ♦ VAPOR DEPOSITED COATINGS ♦ PLASMA HEATING ♦ ARGON ♦ NITROGEN
Abstract Radio frequency Ar and Ar + N{sub 2} plasma jets generated in a hollow electrode terminated by a small size Ti nozzle were used for deposition of TiN and TiN films. The regime with low content of reactive gas resulted in an extreme enhancement of TiN deposition rate, more than one order higher than that of Ti. Abrupt increase of the nozzle temperature to >1,350 C in this regime is caused by additional thermal energy imparted to the nozzle. Abrupt decrease of the cathode dc self-bias and simultaneous steep increase of the optical emission from Ti and from ions Ti{sup +}, N{sup +}{sub 2}, and Ar{sup +} indicate the transition of the discharge into the RPJ-arc. This reflects in an enhanced production of Ti and Ti{sup +} which leads to a high rate ({approx}{mu}m/min) growth of films. The microhardness of films at low nitrogen content is {approximately}2,600 HV{sub 25} and the film resistivity is 80 {mu}{Omega} cm. Geometry of the particle transport and the distribution of the film thickness on substrates confirm a hollow profile of the particle density distribution in the plasma jet.
ISSN 00134651
Educational Use Research
Learning Resource Type Article
Publisher Date 1995-03-01
Publisher Place United States
Journal Journal of the Electrochemical Society
Volume Number 142
Issue Number 3


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