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Author Moon, Yong-Tae ♦ Kim, Dong-Joon ♦ Song, Keun-Man ♦ Choi, Chel-Jong ♦ Han, Sang-Heon ♦ Seong, Tae-Yeon ♦ Park, Seong-Ju
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword HYDROGEN ♦ MATERIALS SCIENCE ♦ ANNEALING ♦ CHEMICAL VAPOR DEPOSITION ♦ DEFECTS ♦ DISLOCATIONS ♦ INDIUM ♦ OPTICAL PROPERTIES ♦ PHOTOLUMINESCENCE ♦ PHYSICS ♦ SEGREGATION ♦ TRANSMISSION ELECTRON MICROSCOPY
Abstract The effects of indium segregation and hydrogen on the optical and structural properties of InGaN/GaN multiple quantum wells, grown by metalorganic chemical vapor deposition were investigated. Photoluminescence and high-resolution transmission electron microscopy analysis showed that two types of indium-rich regions can be formed in the InGaN well layers. Self-assembled quantum dot-like indium-rich regions were found in the well layer grown at a normal growth temperature. These regions behaved as luminescent centers, showing a maximum indium content at the center of indium-rich region. However, randomly-distributed indium-segregated regions, which formed near the upper interface of the InGaN well layers during the subsequent high-temperature annealing process led to the degradation of the optical properties by generating defects such as misfit dislocations. The use of hydrogen during the growth interruption was found to be very effective in suppressing the formation of indium-segregated regions in the InGaN well layers. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 11


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