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Author Li, J. H. ♦ Kulik, J. ♦ Holy, V. ♦ Zhong, Z. ♦ Moss, S. C. ♦ Zhang, Y. ♦ Ahrenkiel, S. P. ♦ Mascarenhas, A. ♦ Bai, Jianming
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword PARTICLE ACCELERATORS ♦ ALLOYS ♦ ATOMIC DISPLACEMENTS ♦ DISTRIBUTION ♦ ORDER PARAMETERS ♦ SCATTERING ♦ SYNCHROTRONS ♦ X-RAY DIFFRACTION ♦ X-RAY SOURCES
Abstract A model has been developed to describe x-ray scattering from CuPt-type ordered III-V ternary semiconductor alloys. The model takes into account the size distribution of the two different laminae-shaped variants, the random distribution of antiphase domain boundaries in each variant, and the atomic displacements due to the bond-length difference between the two constitutive binary materials. A synchrotron x-ray source was employed to measure the weak-ordering reflections from CuPt-ordered Ga{sub 0.5}In{sub 0.5}P and Al{sub 0.5}In{sub 0.5}As samples. By comparing the experimental results and the model calculations, structure information, including the average number of atomic layers in the laminae of each variant, the average antiphase domain size, and the average order parameter in each variant, were obtained. Results from single-variant films and poorly ordered films are also discussed.
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-04-15
Publisher Place United States
Journal Physical Review B
Volume Number 63
Issue Number 15


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