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Author Zhu, Jun ♦ Xiao, Lingling ♦ Ding, Tiezhu ♦ Wang, Yanlai ♦ Fan, Yue
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ABSORPTION ♦ ABSORPTION SPECTRA ♦ CERIUM ♦ CERIUM IONS ♦ CHALCOPYRITE ♦ COPPER SULFIDES ♦ DOPED MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ INDIUM SULFIDES ♦ PHOTONS ♦ POWDER METALLURGY ♦ SCANNING ELECTRON MICROSCOPY ♦ SEMICONDUCTOR MATERIALS ♦ SINTERING ♦ THIN FILMS ♦ X-RAY DIFFRACTION ♦ X-RAY PHOTOELECTRON SPECTROSCOPY
Abstract Cerium doped CuInS{sub 2} thin films were successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurements showed that the as-prepared CuIn{sub 1−x}Ce{sub x}S{sub 2} samples are of good crystallinity and crystallize with chalcopyrite structure when sintering at 550 °C. The presence of Ce{sup 3+} in host material was conformed by X-ray photoelectron spectroscopy. Two subband photon absorption peaks were observed at 1710 nm (0.73 eV) and 1955 nm (0.63 eV) in the UV–Vis–NIR absorption spectrum. This behavior could suggest that an intermediate band forms in the forbidden band of CuInS{sub 2} semiconductor due to cerium incorporation. The optical bandgap of CuIn{sub 1−x}Ce{sub x}S{sub 2} films was tuned in the range of 1.38 eV to 1.23 eV with increasing cerium content. And the electrical conductivity could be improved if doped moderate cerium content, especially x = 0.1.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-09-21
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 11


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