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Author Zhao, Wei ♦ Cao, Yu
Source ACM Digital Library
Content type Text
Publisher Association for Computing Machinery (ACM)
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword FinFET ♦ Technology scaling ♦ Early design exploration ♦ Predictive modeling ♦ Process variations
Abstract A predictive MOSFET model is critical for early circuit design research. In this work, a new generation of Predictive Technology Model (PTM) is developed, covering emerging physical effects and alternative structures, such as the double-gate device (i.e., FinFET). Based on physical models and early stage silicon data, PTM of bulk and double-gate devices are successfully generated from 130nm to 32nm technology nodes, with effective channel length down to 13nm. By tuning only ten primary parameters, PTM can be easily customized to cover a wide range of process uncertainties. The accuracy of PTM predictions is comprehensively verified with published silicon data: the error of the current is below 10% for both NMOS and PMOS. Furthermore, the new PTM correctly captures process sensitivities in the nanometer regime. PTM is available online at
ISSN 15504832
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-04-01
Publisher Place New York
e-ISSN 15504840
Journal ACM Journal on Emerging Technologies in Computing Systems (JETC)
Volume Number 3
Issue Number 1

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Source: ACM Digital Library