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Author Yu, Tung-Yuan ♦ Pan, Fu-Ming ♦ Chang, Cheng-Yi ♦ Lin, Jian-Siang ♦ Huang, Wen-Hsien
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ARSENIC SELENIDES ♦ CARRIER MOBILITY ♦ CARRIERS ♦ CHARGE CARRIERS ♦ CURRENT DENSITY ♦ DEPLETION LAYER ♦ DEPOSITION ♦ ELECTRIC FIELDS ♦ ELECTRONS ♦ PHOTOCONDUCTIVITY ♦ PHOTOSENSITIVITY ♦ QUANTUM EFFICIENCY ♦ SELENIUM ♦ STABILITY ♦ VISIBLE RADIATION
Abstract In this study, we fabricated a-Se based photosensors with an alternating multilayer structure of a-Se and As{sub x}Se{sub 1−x} by rotational thermal evaporation deposition. During the deposition of the amorphous As{sub x}Se{sub 1−x} layers, As diffuses into the underlying a-Se component layers, thereby improving the thermal stability of the multilayer photosensor and thus increasing the breakdown electric field. Although the As doping introduces carrier traps in the a-Se layers, the multilayer photosensors demonstrate an effective quantum efficiency comparable to the single-layered a-Se sensor under the blue light illumination but are with a lower dark current density by two orders of magnitude. In addition to the top As{sub x}Se{sub 1−x} layer being functioning as an electron blocking layer, carrier traps present in the multilayer structure may decrease the drift mobility of charge carriers and disturb electric field distribution in the photosensors, thereby suppressing the dark current.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-07-28
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 118
Issue Number 4


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