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Author Faita, F. L. ♦ Silva, J. P. B. ♦ Pereira, M. ♦ Gomes, M. J. M.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM OXIDES ♦ COUPLING ♦ DEPOSITION ♦ FILAMENTS ♦ HAFNIUM ♦ ION BEAMS ♦ LAYERS ♦ OXYGEN ♦ PHOTOLUMINESCENCE ♦ RUPTURES ♦ SPECTRA ♦ SPUTTERING ♦ SUBSTRATES ♦ TEMPERATURE DEPENDENCE ♦ THICKNESS ♦ THIN FILMS ♦ VACANCIES ♦ VOLATILITY
Abstract In this work, hafnium aluminum oxide (HfAlO) thin films were deposited by ion beam sputtering deposition technique on Si substrate. The presence of oxygen vacancies in the HfAlO{sub x} layer deposited in oxygen deficient environment is evidenced from the photoluminescence spectra. Furthermore, HfAlO(oxygen rich)/HfAlO{sub x}(oxygen poor) bilayer structures exhibit multilevel resistive switching (RS), and the switching ratio becomes more prominent with increasing the HfAlO layer thickness. The bilayer structure with HfAlO/HfAlO{sub x} thickness of 30/40 nm displays the enhanced multilevel resistive switching characteristics, where the high resistance state/intermediate resistance state (IRS) and IRS/low resistance state resistance ratios are ≈10{sup 2} and ≈5 × 10{sup 5}, respectively. The switching mechanisms in the bilayer structures were investigated by the temperature dependence of the three resistance states. This study revealed that the multilevel RS is attributed to the coupling of ionic conduction and the metallic conduction, being the first associated to the formation and rupture of conductive filaments related to oxygen vacancies and the second with the formation of a metallic filament. Moreover, the bilayer structures exhibit good endurance and stability in time.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-12-14
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 24


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