|Author||Sahu, T. ♦ Patra, J. N. ♦ Subudhi, P. K.|
|Publisher||Indian J. Phys.|
|Subject Domain (in DDC)||Natural sciences & mathematics ♦ Physics|
|Subject Keyword||Electron mobility ♦ Delta doping ♦ 2DEG ♦ Ga0.5In0.5P/GaAs quantum well systems|
|Abstract||We analyse the low temperature subband electron mobility in aGa0.5In0.5P/GaAs quantum well structure where the side barriers are delta-doped withlayers of Si. The electrons are transferred from both the sides into the wellforming two dimensional electron gas (2DEG). We consider the interface roughnessscattering in addition to ionised impurity scattering. The effect of screening ofthe scattering potentials by 2DEG on the electron mobility is analysed by changingwell width. Although the ionized impurity scattering is a dominant mechanism, forsmall well width the interface roughness scattering happens to be appreciable. Ouranalysis can be utilized for low temperature device applications.|
|Education Level||UG and PG|
|Learning Resource Type||Article|
|Journal||Indian J Phys|
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