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Author Sahu, T. ♦ Patra, J. N. ♦ Subudhi, P. K.
Source IACS Kolkata
Content type Text
Publisher Indian J. Phys.
File Format PDF
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Physics
Subject Keyword Electron mobility ♦ Delta doping ♦ 2DEG ♦ Ga0.5In0.5P/GaAs quantum well systems
Abstract We analyse the low temperature subband electron mobility in aGa0.5In0.5P/GaAs quantum well structure where the side barriers are delta-doped withlayers of Si. The electrons are transferred from both the sides into the wellforming two dimensional electron gas (2DEG). We consider the interface roughnessscattering in addition to ionised impurity scattering. The effect of screening ofthe scattering potentials by 2DEG on the electron mobility is analysed by changingwell width. Although the ionized impurity scattering is a dominant mechanism, forsmall well width the interface roughness scattering happens to be appreciable. Ouranalysis can be utilized for low temperature device applications.
Education Level UG and PG
Learning Resource Type Article
Journal Indian J Phys
Volume Number 83
Issue Number 4
Page Count 5
Starting Page 547
Ending Page 551