Thumbnail
Access Restriction
Open

Author Parkhomovsky, A. ♦ Dabiran, A. M. ♦ Benjaminsson, B. ♦ Cohen, P. I.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ AMMONIA ♦ CHEMICAL VAPOR DEPOSITION ♦ DEFECTS ♦ EPITAXY ♦ KINETICS ♦ PHYSICS ♦ SUBSTRATES ♦ THERMODYNAMICS
Abstract GaN grown by molecular-beam epitaxy on Ga-polar GaN templates prepared by metal organic chemical vapor deposition shows a variety of morphologies that depend on defects and growth conditions. We measured the mean terrace widths of hexagonal growth spirals or hillocks versus ammonia and Ga fluxes and substrate temperature. The measurements were compared to a near equilibrium model of the growth. The results indicate that under excess Ga growth conditions, Ga-polar GaN(0001) has a mean step-edge energy of 0.27 eV/Aa.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-04-16
Publisher Place United States
Journal Applied Physics Letters
Volume Number 78
Issue Number 16


Open content in new tab

   Open content in new tab