Thumbnail
Access Restriction
Open

Author Nishida, Toshio ♦ Saito, Hisao ♦ Kobayashi, Naoki
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ DESIGN ♦ EFFICIENCY ♦ GEOMETRY ♦ LIGHT EMITTING DIODES ♦ LIGHT SOURCES ♦ NITRIDES ♦ PACKAGING ♦ PERFORMANCE ♦ PHYSICS ♦ QUANTUM EFFICIENCY ♦ WAVELENGTHS
Abstract By introducing thick bulk GaN as a substrate, we improved the performance of an AlGaN-based ultraviolet (UV) light-emitting diode (LED). The output power exceeds 3 mW at the injection current of 100 mA under a bare-chip geometry. Internal quantum efficiency is estimated as more than 80%, and the peak wavelength is 352 nm. The maximum power exceeds 10 mW at a large current injection of 400 mA, with an operation voltage of less than 6 V. These results indicate that an efficient UV LED is intrinsically possible by the combination of appropriate device design and the nitride substrate. By introducing packaging technology to enhance extraction efficiency, we will have a compact and efficient UV light source in the wide wavelength range of 200--360 nm, similar to conventional longer-wavelength LEDs. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-06
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 6


Open content in new tab

   Open content in new tab