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Author Jones, A. M. ♦ Jewell, J. L. ♦ Mabon, J. C. ♦ Reuter, E. E. ♦ Bishop, S. G. ♦ Roh, S. D. ♦ Coleman, J. J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ INDIUM COMPOUNDS ♦ GALLIUM ARSENIDES ♦ PHOTOLUMINESCENCE ♦ THIN FILMS ♦ STRAINS ♦ CATHODOLUMINESCENCE ♦ CHEMICAL VAPOR DEPOSITION ♦ IMAGES ♦ FABRICATION
Abstract Long-wavelength photoluminescence at 1.35 {mu}m has been measured from an InGaAs quantum-well heterostructure deposited on disk-shaped InGaAs (x{sub In}=0.05) compliant-film membranes. Strain-induced warping is avoided by utilizing a single pedestal to suspend each compliant-film disk over a GaAs substrate. Cathodoluminescence (CL) spectra verify the long-wavelength emission, and panchromatic CL images reveal that strong emission occurs only on compliant film structures supported by 1-{mu}m-diam pedestals. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-02-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 74
Issue Number 7


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