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Author Han, D. ♦ Wang, K. ♦ Von Roedern, B.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON ♦ PHOTOLUMINESCENCE ♦ HYDROGENATION ♦ POROUS MATERIALS ♦ AMORPHOUS STATE ♦ HYDROGEN ADDITIONS ♦ ELECTROLUMINESCENCE ♦ P-N JUNCTIONS ♦ TEMPERATURE DEPENDENCE ♦ TRAPPING ♦ P-I-N JUNCTIONS
Abstract Significant differences in the features of the electroluminescence (EL) and photoluminescence (PL) in amorphous silicon {ital p}-{ital i}-{ital n} structures have been observed. At low temperatures the EL peak energy is {approximately}0.2 eV lower than that of the PL, shifts to lower energies with temperature only weakly relative to PL, and also shifts to higher energy with increasing electric field. The EL efficiency shows a maximum at the temperature at which the carrier transport mechanism changes. The long-standing puzzling differences between EL and PL are described not as an experimental artifact but as a direct result of the physics governing trapping and transport, the dispersive-transport-controlled carrier recombination, in amorphous materials. {copyright} {ital 1996 The American Physical Society.}
ISSN 00319007
Educational Use Research
Learning Resource Type Article
Publisher Date 1996-11-01
Publisher Department National Renewable Energy Laboratory
Publisher Place United States
Journal Physical Review Letters
Volume Number 77
Issue Number 21
Organization National Renewable Energy Laboratory


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