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Author Monteiro, T. ♦ Soares, J. ♦ Correia, M. R. ♦ Alves, E.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ANNEALING ♦ BACKSCATTERING ♦ EXCITATION ♦ LUMINESCENCE ♦ PHOTOLUMINESCENCE ♦ PHYSICS
Abstract Er-related luminescence near 1.54 {mu}m ({similar_to}805 meV) is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 11


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