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Author Oraevsky, Anatolii N.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ BOSE-EINSTEIN CONDENSATION ♦ CARRIERS ♦ COULOMB FIELD ♦ GALLIUM ARSENIDES ♦ LASERS ♦ PULSES ♦ SEMICONDUCTOR MATERIALS ♦ SOLID-STATE PLASMA ♦ SUPERRADIANCE ♦ TEMPERATURE RANGE 0273-0400 K ♦ THRESHOLD ENERGY ♦ ARSENIC COMPOUNDS ♦ ARSENIDES ♦ ELECTRIC FIELDS ♦ EMISSION ♦ ENERGY ♦ ENERGY-LEVEL TRANSITIONS ♦ GALLIUM COMPOUNDS ♦ MATERIALS ♦ PHOTON EMISSION ♦ PLASMA ♦ PNICTIDES ♦ STIMULATED EMISSION ♦ TEMPERATURE RANGE
Abstract Experiments allowing the production of carriers at high concentrations (5 x 10{sup 19}-10{sup 20} cm{sup -3}) in a semiconductor irradiated by femtosecond laser pulses are discussed. At such high concentrations, and at room temperature the formation of the Bose condensate of an electron - hole plasma is expected, which is accompanied by superradiance. A minimal (threshold) energy is determined which should be absorbed in an elementary event for producing a certain concentration of free carriers. When the carrier concentration is high, carriers with opposite mass signs can appear in the conduction band of gallium arsenide and, hence, the efficient Coulomb attraction is possible between carriers in the same band, which should be taken into account in the formation of a correlated state of carriers. (letters)
ISSN 10637818
Educational Use Research
Learning Resource Type Article
Publisher Date 2003-05-31
Publisher Place United States
Journal Quantum Electronics
Volume Number 33
Issue Number 5


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