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Author Aratani, Masanori ♦ Oikawa, Takahiro ♦ Ozeki, Tomohiko ♦ Funakubo, Hiroshi
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword MATERIALS SCIENCE ♦ CHEMICAL VAPOR DEPOSITION ♦ PHYSICS ♦ POLARIZATION ♦ SUBSTRATES
Abstract Epitaxial-grade polycrystalline Pb(Zr,Ti)O{sub 3} (PZT) films were deposited at 415{sup o}C by source- gas-pulsed-introduced metalorganic chemical vapor deposition. The polycrystalline PZT film with Zr/(Zr+Ti)=0.35 which was prepared on (111)Pt/Ti/SiO{sub 2}/Si substrate showed highly (100)- and (001)-preferred orientations. Well-saturated ferroelectricity with a remanent polarization (P{sub r}) and coercive field of 41.4 {mu}C/cm{sup 2} and 78.5 kV/cm, respectively, was obtained. This P{sub r} value is almost the same as that of epitaxially grown films at 580{sup o}C with the same composition and orientations taking into account of the volume fraction of (100) and (001) orientations. {copyright} 2001 American Institute of Physics.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-08-13
Publisher Place United States
Journal Applied Physics Letters
Volume Number 79
Issue Number 7


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