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Author Aziz, M. J.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword PHYSICS ♦ GERMANIUM SILICIDES ♦ POINT DEFECTS ♦ DIFFUSION ♦ PRESSURE DEPENDENCE ♦ SILICON ♦ SEMICONDUCTOR MATERIALS ♦ ANTIMONY ♦ THERMODYNAMIC PROPERTIES ♦ SELF-DIFFUSION ♦ INTERSTITIALS ♦ THERMODYNAMICS ♦ STRAINS ♦ ANTIMONY ADDITIONS ♦ VACANCIES
Abstract A thermodynamic formalism is developed for illuminating the predominant point defect mechanism of self- and impurity diffusion in silicon and is used to provide a rigorous basis for point defect-based interpretation of diffusion experiments in biaxially strained epitaxial layers in the Si{endash}Ge system. A specific combination of the hydrostatic and biaxial stress dependences of the diffusivity is {plus_minus}1 times the atomic volume, depending upon whether the predominant mechanism involves vacancies or interstitials. Experimental results for Sb diffusion in biaxially strained Si{endash}Ge films and {ital ab initio} calculations of the activation volume for Sb diffusion by a vacancy mechanism are in quantitative agreement with no free parameters. Key parameters are identified that must be measured or calculated for a quantitative test of interstitial-based mechanisms. {copyright} {ital 1997 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1997-05-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 70
Issue Number 21


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