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Author Khasanvis, Santosh ♦ Habib, K M Masum ♦ Rahman, Mostafizur ♦ Lake, Roger ♦ Moritz, Csaba Andras
Source ACM Digital Library
Content type Text
Publisher Association for Computing Machinery (ACM)
File Format PDF
Copyright Year ©2015
Language English
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword GNTRAM ♦ Low-power design ♦ Benchmarking ♦ Graphene nanoribbons ♦ Hybrid integrated circuits ♦ Memory circuit ♦ Multistate memory ♦ Negative differential resistance
Abstract Graphene is an emerging nanomaterial believed to be a potential candidate for post-Si nanoelectronics due to its exotic properties. Recently, a new graphene nanoribbon crossbar (xGNR) device was proposed which exhibits negative differential resistance (NDR). In this article, a multistate memory design is presented that can store multiple bits in a single cell enabled by this xGNR device, called graphene nanoribbon tunneling random access memory (GNTRAM). An approach to increase the number of bits per cell is explored alternative to physical scaling to overcome CMOS SRAM limitations. A comprehensive design for quaternary GNTRAM is presented as a baseline, implemented with a heterogeneous integration between graphene and CMOS. Sources of leakage and approaches to mitigate them are investigated. This design is extensively benchmarked against 16nm CMOS SRAMs and 3T DRAM. The proposed quaternary cell shows up to 2.27× density benefit versus 16nm CMOS SRAMs and 1.8× versus 3T DRAM. It has comparable read performance and is power efficient up to 1.32× during active period and 818× during standby against high-performance SRAMs. Multistate GNTRAM has the potential to realize high-density low-power nanoscale embedded memories. Further improvements may be possible by using graphene more extensively, as graphene transistors become available in the future.
Description Author Affiliation: University of California Riverside, Riverside, CA (Habib, K M Masum; Lake, Roger); University of Massachusetts Amherst, Amherst, MA (Khasanvis, Santosh; Rahman, Mostafizur; Moritz, Csaba Andras)
ISSN 15504832
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2015-09-02
Publisher Place New York
e-ISSN 15504840
Journal ACM Journal on Emerging Technologies in Computing Systems (JETC)
Volume Number 12
Issue Number 2
Page Count 18
Starting Page 1
Ending Page 18


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Source: ACM Digital Library